- 您現在的位置：買賣IC網 > PDF目錄48773 > SGB20UFSMSTXV (SOLID STATE DEVICES INC) 0.06 A, SILICON, SIGNAL DIODE PDF資料下載
參數資料
| 型號： | SGB20UFSMSTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.06 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, SMS, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 76K |
| 代理商： | SGB20UFSMSTXV |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information
1/
SGB _ _ UF SMS __
L Screening2/
= None
TX = TX Level
TXV = TXV Level
S = S Level
L Package
SMS = Surface Mount Square Tab
L
Recovery Time
UF = Ultra Fast
L
Voltage
10 = 1000 V
15 = 1500 V
20 = 2000 V
25 = 2500 V
30 = 3000 V
35 = 3500 V
SGB10UFSMS
thru
SGB35UFSMS
60 mAMP
1000-3500 VOLTS
60 nsec
HIGH VOLTAGE
RECTIFIER
FEATURES:
Ultra Fast Recovery: 60 nsec Maximum
PIV to 3500 Volts
Hermetically Sealed
Void-Free Construction
Metallurgically Bonded
175°C Maximum Operating Temperature
Micro Miniature Package
TX, TXV, and Space Level Screening Available
2/
ELECTRICAL CHARACTERISTICS
Part
Number
Peak
Inverse
Voltage
Average
Rectified
Current
Maximum
Reverse Current
Maximum
Forward
Voltage
Maximum
Surge
Current
(1 Cycle)
Maximum
Reverse
Recovery
Time
Maximum
Junction
Capacitance
Typical
Thermal
Impedance
Symbol
PIV
I0
IR@PIV
VF4/
IFSM
tRR7/
CJ
θJE
Units
mA
μA
Volts
Amps
nsec
pF
Conditions
Volts
25°C
100°C
25°C
100°C
25°C
VR = 100V
fT = 1MHZ
°C/W
SGB10UFSMS
1000
60
50
0.1
10
9.5
5
60
1.0
165
SGB15UFSMS
1500
60
50
0.1
10
9.5
5
60
1.0
165
SGB20UFSMS
2000
60
50
0.1
10
9.5
5
60
1.0
165
SGB25UFSMS
2500
60
50
0.1
10
9.5
5
60
1.0
165
SGB30UFSMS
3000
60
50
0.1
10
9.5
5
60
1.0
165
SGB35UFSMS
3500
60
50
0.1
10
9.5
5
60
1.0
165
1/ For Ordering Information, Price, and Availability – Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Operating and testing over 10,000 V/inch may require encapsulation or immersion in a suitable dielectric material.
4/ IF = IO; Max. forward voltage measured with instantaneous forward pulse of 300sec minimum.
5/ Max. lead temperature for soldering is 250°C, 3/8” from case for 5 sec maximum.
6/ Operating and storage temperature: -65°C to +175°C.
7/ Reverse Recovery Test Conditions: IF=50mA, IR=100mA, IRR=25mA, TA=25°C.
8/ Consult manufacturing for operating curves.
Surface Mount Square
Tab
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RV0005E
DOC
相關PDF資料 |
PDF描述 |
|---|---|
| SGB25UFSMSTX | 0.06 A, SILICON, SIGNAL DIODE |
| SGB25UFSMSTXV | 0.06 A, SILICON, SIGNAL DIODE |
| SGB30UFSMSS | 0.06 A, SILICON, SIGNAL DIODE |
| SGB25UFS | 0.06 A, SILICON, SIGNAL DIODE |
| SGB25UFTX | 0.06 A, SILICON, SIGNAL DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SGB-2233 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 4.5GHZ 16-QFN |
| SGB-2233Z | 制造商:SIRENZA 制造商全稱:SIRENZA 功能描述:DC - 4.5 GHz Active Bias Gain Block |
| SGB-23P-03V | 制造商:Alpha 3 Manufacturing 功能描述: |
| SGB-2433 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 4GHZ 16-QFN |
| SGB-2433Z | 制造商:SIRENZA 制造商全稱:SIRENZA 功能描述:DC - 4 GHz Active Bias Gain Block |
發(fā)布緊急采購，3分鐘左右您將得到回復。