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參數資料
| 型號： | SGB30N60 |
| 廠商： | SIEMENS A G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術中的快速 S-IGBT) |
| 中文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數： | 1/12頁 |
| 文件大小： | 268K |
| 代理商： | SGB30N60 |
SGP30N60
SGB30N60, SGW30N60
1
Mar-00
Fast S-IGBT in NPT-technology
G
C
E
75% lower
E
off
compared to previous generation combined with
low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SGP30N60
SGB30N60
SGW30N60
600V
30A
2.5V
150
°
C
TO-220AB
TO-263AB
TO-247AC
Q67041-A4713-A2
Q67041-A4713-A4
Q67040-S4237
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
600
V
A
41
30
I
Cpuls
-
112
112
V
GE
E
AS
±
20
165
V
Avalanche energy, single pulse
I
C
= 30 A,
V
CC
= 50 V,
R
GE
= 25
,
start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
mJ
t
SC
10
μ
s
P
tot
250
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關PDF資料 |
PDF描述 |
|---|---|
| SGP30N60 | Fast S-IGBT in NPT-technology( NPT 技術中的快速 S-IGBT) |
| SGW30N60 | Fast S-IGBT in NPT-technology( NPT 技術中的快速 S-IGBT) |
| SGD-100T | C to X Band, Mixer, Modulator Applications |
| SGD-100 | GaAs Schottky Barrier Diode（C to X Band, Mixer, Modulator Applications）(應用于C到X帶寬，混頻器和調制器的砷化鎵肖特基勢壘二極管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGB30N60_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGB30N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 41A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 41A 250W TO263-3 |
| SGB30N60-E3045A | 制造商:Infineon Technologies AG 功能描述: |
| SGB30UF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
| SGB30UFSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
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