- 您現在的位置：買賣IC網 > PDF目錄374783 > SGF29 (Sanyo Electric Co.,Ltd.) For C to Ku-band Local Oscillator and Amplifier PDF資料下載
參數資料
| 型號： | SGF29 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | For C to Ku-band Local Oscillator and Amplifier |
| 中文描述： | 對于C到Ku波段本地振蕩器和放大器 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | SGF29 |
SGF29
No.7054-1/5
Features
Lowest phase noise.
The chip surface is covered with the highly reliable
protection film.
Super miniaturized plastic-mold package (CP4).
Automatic surface mounting is available.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7054A
SGF29
Package Dimensions
unit : mm
2134A
[SGF29]
11802 GI IM / 91001 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel GaAs MESFET
For C to Ku-band Local Oscillator and Amplifier
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDS
VGS
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
V
V
mA
mW
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
6
--5
100
200
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Gate-to-Source Leakage Current
Saturated Drain Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
IGSO
IDSS
VGS(off)
yfs
VGS=--5V
VDS=3V, VGS=0
VDS=3V, ID=100
μ
A
VDS=3V, ID=10mA
--10
70
--2.5
μ
A
mA
V
mS
30
50
--0.5
--1.4
44
1 : Gate
2 : Source
3 : Drain
4 : Source
SANYO : CP4
0
0 to 0.1
0.16
1.9
0.95 0.95
0.4
4
3
0.95 0.85
2.9
0.6
2
1
0
1
0
2
1
相關PDF資料 |
PDF描述 |
|---|---|
| SGF31 | For C to Ku-band Local Oscillator and Amplifier |
| SGF32 | N CHANNEL GAASMES TRANSISTOR |
| SGF34 | N CHANNEL GAAS TRANSISTOR |
| SGF9 | For C to X-band Local Oscillator and Amplifier |
| SGM2013 | GaAs N-channel Dual-Gate MES FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SGF31 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C to Ku-band Local Oscillator and Amplifier |
| SGF32 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N CHANNEL GAASMES TRANSISTOR |
| SGF33 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C to Ku-Band Local Oscillator and Amplifier |
| SGF34 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N CHANNEL GAAS TRANSISTOR |
| SGF34-TL-E | 制造商:ON Semiconductor 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。