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參數資料
| 型號： | SGF40N60UFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 357K |
| 代理商： | SGF40N60UFD |
FEATURES
* High Speed Switching
* Low Saturation Voltage
: V
CE
(sat) = 2.0 V (@ Ic=20A)
* High Input Impedance
*CO-PAK, IGBT with FRD
: Trr = 42nS (typ.)
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
Notes:
(1) Repetitive rating : Pulse width limited by max. junction temperature
TO-3PF
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
Tj
Tstg
T
L
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ Tc = 25
°
C
Collector Current @ Tc = 100
°
C
Pulsed Collector Current
Diode Continuous Forward Current @ Tc = 100
°
C
Diode Maximum Forward Current
Maximum Power Dissipation @Tc = 25
°
C
Maximum Power Dissipation @Tc = 100
°
C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. For Soldering
Purposes, 1/8
”
from case for 5 seconds
Rating
600
±
20
40
20
160
15
160
96
38
-55 ~ 150
-55 ~ 150
300
Units
V
V
A
A
A
A
A
W
W
°
C
°
C
°
C
G
C
E
SGF40N60UFD
CO-PAK IGBT
1999 Fairchild Semiconductor Corporation
Rev.B
相關PDF資料 |
PDF描述 |
|---|---|
| SGF40N60 | High Speed Switching |
| SGF80N60UFD | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| SGF80N60UF | CONNECTOR ACCESSORY |
| SGH10N120RUF | Short Circuit Rated IGBT |
| SGH10N120RUFD | Short Circuit Rated IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SGF40N60UFTU | 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGF-51T-5 | 制造商:JST Manufacturing 功能描述:Bullet Terminal 14-20AWG F 17.5mm Tin Reel |
| SGF5N150UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Description |
| SGF5N150UFTU | 功能描述:IGBT 晶體管 1500V / 5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGF80N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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