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參數資料
| 型號： | SGH15N60RUFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 649K |
| 代理商： | SGH15N60RUFD |
2000 Fairchild Semiconductor International
March 2000
SGH15N60RUFD Rev. A
IGBT
S
SGH15N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD
series provides low conduction and switching losses as well
as short circuit ruggedness. RUFD series is designed for
the applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.
Features
Short Circuit rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 15A
High Input Impedance
CO-PAK, IGBT with FRD : t
rr
= 42ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGH15N60RUFD
600
±
20
24
15
45
15
160
10
160
64
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
us
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
T
SC
P
D
@ T
C
= 100
°
C
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
0.77
0.7
40
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G C E
TO-3P
G
C
E
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| SGH20N60RUFD | Short Circuit Rated IGBT(短路電流額定的絕緣柵雙極晶體管(IGBT)) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGH15N60RUFDTU | 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH15N60RUFTU | 功能描述:IGBT 晶體管 600V/15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH20N120RUF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH20N120RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH20N120RUFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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