- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383810 > SGH20N120RUFD (FAIRCHILD SEMICONDUCTOR CORP) CAP CERM 1UF 4V X7R 0508 20% PDF資料下載
參數(shù)資料
| 型號(hào)： | SGH20N120RUFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CAP CERM 1UF 4V X7R 0508 20% |
| 中文描述： | 32 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 505K |
| 代理商： | SGH20N120RUFD |
2002 Fairchild Semiconductor Corporation
SGH20N120RUF Rev. B2
IGBT
S
SGH20N120RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) RUF series provides low conduction and switching
losses as well as short circuit ruggedness. The RUF series
is designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10
μ
s @ T
C
= 100
°
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.3 V @ I
C
= 20A
High input impedance
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGH20N120RUF
1200
±
25
32
20
60
10
230
92
-55 to +150
-55 to +150
Units
V
V
A
A
A
μ
s
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
T
SC
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ.
--
--
Max.
0.54
40
Units
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G C E
TO-3P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SGH20N60RUF | Short Circuit Rated IGBT |
| SGH30N60RUF | Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes |
| SGL20N60RUFD | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| SGL30N60RUFD | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| SGL60N98D | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGH20N120RUFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH20N120RUFTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH20N60RUF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH20N60RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH20N60RUFDTU | 功能描述:IGBT 晶體管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。