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參數資料
型號: SGM2016AP
廠商: Sony Corporation
英文描述: GaAs N-channel Dual-Gate MES FET
中文描述: 砷化鎵N溝道雙柵場效應晶體管
文件頁數: 1/5頁
文件大小: 57K
代理商: SGM2016AP
Description
The SGM2016AM/AP is an N-channel dual-gate
GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
Features
Low voltage operation
Low noise NF = 1.2dB (typ.) at 900MHz
High gain Ga = 21dB (typ.) at 900MHz
High stability
Built-in gate protection diode
Application
UHF-band high-frequency amplifier, mixer, and oscillator
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Allowable power dissipation
Channel temperature
Storage temperature
V
DSX
V
G1S
V
G2S
I
D
P
D
Tch
Tstg
12
–5
–5
55
150
150
V
V
V
mA
mW
°C
°C
–55 to +150
– 1 –
SGM2016AM/AP
E96Y10-PS
GaAs N-channel Dual-Gate MES FET
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SGM2016AM
SGM2016AP
相關PDF資料
PDF描述
SGM2016 GaAs N-channel Dual-Gate MES FET
SGM2016AM GaAs N-channel Dual-Gate MES FET
SGM2016AN GaAs N-channel Dual-Gate MES FET
SGM2016M GaAs N-channel Dual-Gate MES FET
SGM2016P GaAs N-channel Dual-Gate MES FET
相關代理商/技術參數
參數描述
SGM2016M 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual-Gate MES FET
SGM2016M-T7 制造商:Panasonic Industrial Company 功能描述:DIODE
SGM2016P 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual-Gate MES FET
SGM2019-2.8YN5G/TR 制造商:SG Micro 功能描述:Single Channel 300mA RF-Linear LDO Regulators
SGM2022 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Dual, Low Dropout, 150mA RF - Linear Regulators
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