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參數(shù)資料
| 型號： | SGP02N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | FAST IGBT IN NPT TECHNOLOGY |
| 中文描述： | 快速IGBT技術(shù)在不擴散核武器條約 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 389K |
| 代理商： | SGP02N60 |
Preliminary
SGP02N120
SGB02N120, SGD02N120
Power Semiconductors
1
Mar-00
Fast S-IGBT in NPT-technology
G
C
E
40% lower
E
off
compared to previous generation
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type
V
CE
I
C
E
off
T
j
Package
Ordering Code
SGP02N120
1200V
2A
0.11mJ
150
°
C
TO-220AB
Q67040-S4270
SGB02N120
TO-263AB(D2PAK)
Q67040-S4271
SGD02N120
TO-252AA(DPAK)
Q67040-S4269
SGI02N120
TO-262
Q67040-S4291
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
1200
V
A
6.2
2.8
I
Cpuls
-
9.6
9.6
V
GE
E
AS
±
20
10
V
Avalanche energy, single pulse
I
C
= 2A,
V
CC
= 50V,
R
GE
= 25
, start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V, 100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
mJ
t
SC
10
μ
s
P
tot
62
W
T
j
,
T
stg
-
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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