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參數資料
| 型號： | SGP15N60 |
| 廠商： | SIEMENS A G |
| 元件分類： | 功率晶體管 |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術中的快速 S-IGBT) |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數： | 1/12頁 |
| 文件大小： | 266K |
| 代理商： | SGP15N60 |
SGP15N60
SGB15N60, SGW15N60
1
Mar-00
Fast S-IGBT in NPT-technology
G
C
E
75% lower
E
off
compared to previous generation combined with
low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SGP15N60
600V
15A
2.3V
150
°
C
TO-220AB
Q67041-A4711-A2
SGB15N60
TO-263AB
Q67041-A4711-A4
SGW15N60
TO-247AC
Q67040-S4235
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
600
V
A
31
15
I
Cpuls
-
62
62
V
GE
E
AS
±
20
85
V
Avalanche energy, single pulse
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
,
start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
mJ
t
SC
10
μ
s
P
tot
139
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGP15N60_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
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| SGP15N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO220-3 |
| SGP18C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GPS SMT Patch Antenna |
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