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參數資料
| 型號： | SGP23N60UFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ultra-Fast IGBT(超快速絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 23 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 623K |
| 代理商： | SGP23N60UFD |
2000 Fairchild Semiconductor International
September 2000
SGP23N60UFD Rev. A
IGBT
S
SGP23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.1 V @ I
C
= 12A
High Input Impedance
CO-PAK, IGBT with FRD : t
rr
= 42ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGP23N60UFD
600
±
20
23
12
92
12
92
100
40
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
1.2
2.5
62.5
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
TO-220
G C E
G
C
E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGP23N60UFDTU | 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGP23N60UFTU | 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGP2-500-BS | 制造商:Banner Engineering 功能描述:SGP2-500-BS PAIR 2 BM GRD W/PIGTAILS 500mm EZ SCREEN |
| SGP2-500-BS20 | 制造商:Banner Engineering 功能描述:SGP2-500-BS20 PR 2 BM GRD W/PIGTAILS 500mm EZ SCREEN |
| SGP2-584 | 制造商:Banner Engineering 功能描述:SAFETY, SGP2-584 PAIR 2 BM GRD 584MM EZ SCREEN |
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