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參數資料
| 型號： | SGU15N40 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | General Description |
| 中文描述： | 一般描述 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 169K |
| 代理商： | SGU15N40 |
2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
IGBT
S
SGR15N40L / SGU15N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
High input impedance
High peak current capability (130A)
Easy gate drive
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
Description
SGR / SGU15N40L
400
±
6
130
45
-40 to +150
-40 to +150
Units
V
V
A
W
°
C
°
C
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T
C
= 25
°
C
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
(D-PAK)
R
θ
JA
(I-PAK)
Parameter
Typ.
--
--
--
Max.
3.0
50
110
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Thermal Resistance, Junction-to-Ambient
Application
Strobe flash.
G
C
E
D-PAK
G
E
C
I-PAK
G
E
C
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|---|---|
| SGU15N40L | General Description |
| SGU1N60XFD | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| SGU20N40 | High input impedance |
| SGU2N60UFD | Ultra-Fast IGBT |
| SGU2N60UF | Ultra-Fast IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SGU15N40L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Description |
| SGU15N40LTU | 功能描述:IGBT 晶體管 SGU15N40LTU RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGU20N40 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High input impedance |
| SGU20N40L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High input impedance |
| SGU20N40LTU | 功能描述:IGBT 晶體管 Dis IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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