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參數資料
| 型號： | SGU20N40L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Wide Noise Immunity IGBT Suitable for Strobe Flash applications(應用于閘門閃光的抗噪聲絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 400 V, N-CHANNEL IGBT, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 217K |
| 代理商： | SGU20N40L |
2000 Fairchild Semiconductor International
September 2000
SGR20N40L / SGU20N40L Rev. A
IGBT
S
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate
structure have superior performance in conduction and
switching to planar gate structure, and also have wide noise
immunity. These devices are well suitable for strobe
applications
Features
High Input Impedance
High Peak Current Capability (150A)
Easy Gate Drive
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
Description
SGR / SGU20N40L
400
±
6
150
45
-40 to +150
-40 to +150
Units
V
V
A
W
°
C
°
C
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
°
C
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
(D-PAK)
R
θ
JA
(I-PAK)
Parameter
Typ.
--
--
--
Max.
3.0
50
110
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Thermal Resistance, Junction-to-Ambient
Application
Strobe Flash
G
C
E
D-PAK
G
E
C
I-PAK
G
E
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGU20N40LTU | 功能描述:IGBT 晶體管 Dis IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGU2N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGU2N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGU2N60UFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGU2N60UFTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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