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參數資料
| 型號： | SGW10N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約快速IGBT技術 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 401K |
| 代理商： | SGW10N60 |
SGP10N60A, SGB10N60A
SGW10N60A
1
Jul-02
Fast IGBT in NPT-technology
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
http://www.infineon.com/igbt/Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SGP10N60A
600V
10A
2.3V
150
°
C
TO-220AB
Q67040-S4457
SGB10N60A
TO-263AB
Q67040-S4507
SGW10N60A
TO-247AC
Q67040-S4510
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
600
V
A
20
10.6
I
Cpuls
-
40
40
V
GE
E
AS
±
20
70
V
Avalanche energy, single pulse
I
C
= 10 A,
V
CC
= 50 V,
R
GE
= 25
,
start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
mJ
t
SC
10
μ
s
P
tot
92
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-247-3-1
(TO-247AC)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
相關PDF資料 |
PDF描述 |
|---|---|
| SGB10N60A | Fast IGBT in NPT-technology |
| SGP10N60A | Fast IGBT in NPT-technology |
| SGW10N60A | Fast IGBT in NPT-technology |
| SGW20N60 | Fast S-IGBT in NPT-technology |
| SGB20N60 | Fast S-IGBT in NPT-technology |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SGW10N60A | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW10N60AFKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 20A 92W TO247-3 |
| SGW10N60RUF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGW10N60RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGW10N60RUFDTM | 功能描述:IGBT 晶體管 600V/10A/W/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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