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參數(shù)資料
| 型號： | SGW5N60RUF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Short Circuit Rated IGBT(額定短路電流絕緣柵雙極晶體管) |
| 中文描述： | 8 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 585K |
| 代理商： | SGW5N60RUF |
2000 Fairchild Semiconductor International
September 2000
SGW5N60RUF Rev. A
IGBT
S
SGW5N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUF
series provides low conduction and switching losses as well
as short circuit ruggedness. RUF series is designed for the
applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.
Features
Short Circuit Rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 5A
High Input Impedance
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol
V
CES
V
GES
Description
SGW5N60RUF
600
±
20
8
5
15
10
60
25
-55 to +150
-55 to +150
Units
V
V
A
A
A
us
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
T
SC
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ.
--
--
Max.
2.0
40
Units
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G
C
E
G
E
C
D2-PAK
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGW5N60RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGW5N60RUFDTM | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW5N60RUFTM | 功能描述:IGBT 晶體管 600V/5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW6N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW6N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
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