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參數資料
| 型號： | SGW5N60RUFDTM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 8 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 646K |
| 代理商： | SGW5N60RUFDTM |
2002 Fairchild Semiconductor Corporation
SGW5N60RUFD Rev. A1
IGBT
S
G
W5N60RUF
D
G
E
C
D2-PAK
SGW5N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's
RUFD
series
of
Insulated
Gate
Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10us @ TC = 100°C, VGE = 15V
High speed switching
Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A
High input impedance
CO-PAK, IGBT with FRD : trr = 37ns (typ.)
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol
Description
SGW5N60RUFD
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C8
A
Collector Current
@ TC = 100°C5
A
ICM (1)
Pulsed Collector Current
15
A
IF
Diode Continuous Forward Current
@ TC = 100°C8
A
IFM
Diode Maximum Forward Current
56
A
TSC
Short Circuit Withstand Time
@ TC = 100°C10
us
PD
Maximum Power Dissipation
@ TC = 25°C60
W
Maximum Power Dissipation
@ TC = 100°C25
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300
°C
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
2.0
°C/W
RθJC(DIODE)
Thermal Resistance, Junction-to-Case
--
3.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
--
40
°C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G
C
E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGW5N60RUFTM | 功能描述:IGBT 晶體管 600V/5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW6N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW6N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW6N60UFDTM | 功能描述:IGBT 晶體管 600V/3A/W/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW6N60UFTM | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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