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參數資料
| 型號： | SGW6N60UF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ultra-Fast IGBT(超高速轉換絕緣柵雙極晶體管) |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 541K |
| 代理商： | SGW6N60UF |
2000 Fairchild Semiconductor International
September 2000
SGW6N60UF Rev. A
IGBT
S
SGW6N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.1 V @ I
C
= 3A
High Input Impedance
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol
V
CES
V
GES
Description
SGW6N60UF
600
±
20
6
3
25
30
12
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
P
D
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ.
--
--
Max.
4.0
40
Units
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G
C
E
G
E
C
D2-PAK
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGW6N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW6N60UFDTM | 功能描述:IGBT 晶體管 600V/3A/W/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGW6N60UFTM | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGWA411M | 制造商:Panasonic Industrial Company 功能描述:PANEL |
| SGWH0120000 | 制造商:LG Corporation 功能描述:SOLDER,SOLDERING |
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