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參數資料
| 型號： | SHB681123E |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE |
| 中文描述： | 20 A, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | SCB-2, 4 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 45K |
| 代理商： | SHB681123E |
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
Technical Data
Datasheet 5015, Rev -
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL
WAVE BRIDGE
DESCRIPTION:
2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
15000-VOLT HI-POT CAPABILITY
MAXIMUM RATINGS
ALL RATINGS ARE @ T
C
= 25
°
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
2500
Volts
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C) WHEN USED AS
A BRIDGE
I
O
20
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T
C
= 25
O
C
I
FRM
80
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10
μ
s, pulse) per leg, T
C
= 25
O
C
I
FSM
250
Amps
MAXIMUM JUNCTION CAPACITANCE (V
r
=5V) per leg
C
T
700
pF
MAXIMUM POWER DISSIPATION, T
C
= 25
O
C
P
d
400
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
R
θ
JC
0.2
°
C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg
-55 to
+150
°
C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP (I
f
= 20A PER LEG)V
f
T
J
=25
°
C
T
J
=150
°
C
MAXIMUM REVERSE CURRENT (2500V PIV PER LEG) I
r
T
J
= 25
°
C
T
J
= 150
°
C
TOTAL CAPACITANCE CHARGE (V
R
=2500V, I
F
=5A, di/dt=500A/
μ
s and
T
J
=25
°
C) Q
C
per leg
5.0
7.5
5.50
9.00
Volts
0.05
0.10
0.40
2.00
mA
60
N/A
nC
SHB681123E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SHB681123E_09 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE |
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