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參數資料
| 型號： | SHD114636B |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | POWER SCHOTTKY RECTIFIER Low Reverse Leakage |
| 中文描述： | 120 A, SILICON, RECTIFIER DIODE |
| 封裝： | SHD-3B, 1 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 147K |
| 代理商： | SHD114636B |
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4097, REV. A
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
·
Switching Power Supply
·
Converters
·
Free-Wheeling Diodes
·
Polarity Protection Diode
Features:
Ultra Low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Symbol
V
RWM
I
F(AV)
Condition
-
Max.
200
150
Units
V
A
50% duty cycle, rectangular
wave form Common Cathode
(N)/Common Anode(P)
50% duty cycle, rectangular
wave form Doubler (D)
8.3 ms, half Sine wave
(per leg)
T
J
= 25
°
C, I
AS
= 1.3 A,
L = 40mH (per leg)
I
AS
decay linearly to 0 in 1
μ
s
limited by T
J
max V
A
=1.5V
R
Per Package
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
I
F(AV)
120
A
I
FSM
1650
A
E
AS
27
mJ
I
AR
1.3
A
R
thJC
T
J
T
stg
0.2
°
C/W
°
C
°
C
-
-
-65 to +175
-65 to +175
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
V
F1
Condition
Max.
0.95
Units
V
@ 120A, Pulse, T
J
= 25
°
C
(per leg) measured at the leads
@ 120A, Pulse, T
J
= 125
°
C
(per leg) measured at the leads
@V
R
= 200V, Pulse,
T
J
= 25
°
C (per leg)
@V
R
= 200V, Pulse,
T
J
= 125
°
C (per leg)
@V
R
= 5 V, T
C
= 25
°
C
f
SIG
= 1 MHz,
V
SIG
= 50mV (p-p) (per leg)
V
F2
0.79
V
Max. Reverse Current
I
R1
0.6
mA
I
R2
6.0
mA
Max. Junction Capacitance
C
T
1800
pF
Due to the nature of the 200V Schottky devices, some degradation in t
rr
performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
SHD114636
SHD114636A
SHD114636B
相關PDF資料 |
PDF描述 |
|---|---|
| SHD114644 | HERMETIC POWER SCHOTTKY RECTIFIER 200•C Maximum Operation Temperature |
| SHD114644A | HERMETIC POWER SCHOTTKY RECTIFIER 200•C Maximum Operation Temperature |
| SHD114644B | HERMETIC POWER SCHOTTKY RECTIFIER 200•C Maximum Operation Temperature |
| SHD114646 | HERMETIC POWER SCHOTTKY RECTIFIER 200∑C Maximum Operation Temperature |
| SHD114646A | HERMETIC POWER SCHOTTKY RECTIFIER 200∑C Maximum Operation Temperature |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SHD114644 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC POWER SCHOTTKY RECTIFIER 200•C Maximum Operation Temperature |
| SHD114644_08 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature |
| SHD114644A | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC POWER SCHOTTKY RECTIFIER 200•C Maximum Operation Temperature |
| SHD114644B | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:HERMETIC POWER SCHOTTKY RECTIFIER 200•C Maximum Operation Temperature |
| SHD114645 | 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:POWER SCHOTTKY RECTIFIER Low Reverse Leakage |
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