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參數(shù)資料
| 型號： | SHD115536B |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HERMETIC SCHOTTKY RECTIFIER Low Forward Voltage Drop |
| 中文描述： | 60 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SHD-2B, 1 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 152K |
| 代理商： | SHD115536B |
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4556, REV. A
HERMETIC SCHOTTKY RECTIFIER
Low Forward Voltage Drop
Features:
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
V
RWM
I
F(AV)
Condition
-
Max.
200
60
Units
V
A
50% duty cycle, rectangular
wave form (Single)
50% duty cycle, rectangular
wave form (Common Cathode)
8.3 ms, half Sine wave
(per leg)
T
J
= 25
°
C, I
AS
= 3.0 A,
L = 4.4 mH (per leg)
I
AS
decay linearly to 0 in 1
μ
s
limited by T
J
max V
A
=1.5V
R
DC operation
Max. Average Forward Current
I
F(AV)
120
A
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche Energy
I
FSM
860
A
E
AS
20
mJ
Repetitive Avalanche Current
I
AR
3.0
A
Maximum Thermal Resistance
R
θ
JC
0.35
°
C/W
Max. Junction Temperature
Max. Storage Temperature
T
J
T
stg
-
-
-65 to +200
-65 to +200
°
C
°
C
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
Symbol
V
F1
V
F2
I
R1
Condition
Max.
0.95
0.79
0.045
Units
V
V
mA
@ 60A, Pulse, T
J
= 25
°
C
@ 60A, Pulse, T
J
= 125
°
C
@V
R
= 200V, Pulse,
T
J
= 25
°
C
@V
R
= 200V, Pulse,
T
J
= 125
°
C
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
(per leg)
I
R2
3.0
mA
Max. Junction Capacitance
(per leg)
C
T
900
pF
SHD115536
SHD115536B
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