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參數資料
| 型號： | SHD116213B |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON SCHOTTKY RECTIFIER Very Low Forward Voltage Drop |
| 中文描述： | 30 A, 60 V, SILICON, RECTIFIER DIODE |
| 封裝： | SHD-1B, 1 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 163K |
| 代理商： | SHD116213B |
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 786, REV. A
SILICON SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Symbol
V
RWM
I
F(AV)
Condition
-
Max.
60
30
Units
V
A
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
I
FSM
1020
A
E
AS
T
J
= 25
°
C, I
AS
= 11.5 A,
L = 11.5 mH
I
AS
decay linearly to 0 in 1
μ
s
limited by T
J
max V
A
=1.5V
R
13
mJ
I
AR
1.5
A
Maximum Thermal Resistance
R
θ
JC
°
C/W
Max. Junction Temperature
Max. Storage Temperature
T
J
T
stg
-
-
-55 to +150
-55 to +150
°
C
°
C
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
V
F1
V
F2
I
R1
Condition
Max.
0.60
0.56
0.8
Units
V
V
mA
@ 15A, Pulse, T
J
= 25
°
C
@ 15A, Pulse, T
J
= 125
°
C
@V
R
= 60V, Pulse,
T
J
= 25
°
C
@V
R
= 60V, Pulse,
T
J
= 125
°
C
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
I
R2
45
mA
Max. Junction Capacitance
C
T
720
pF
SHD116213
SHD116213B
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