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參數(shù)資料
| 型號(hào)： | SHD119222P |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON SCHOTTKY RECTIFIER |
| 中文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE |
| 封裝： | LCC-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 87K |
| 代理商： | SHD119222P |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-Mail - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 777, REV. A
SILICON SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Symbol
V
RWM
I
F(AV)
Condition
-
Max.
45
15
Units
V
A
50% duty cycle, rectangular
wave form (Single)
50% duty cycle, rectangular
wave form (Common Cathode)
8.3 ms, half Sine wave
(per leg)
T
J
= 25
C, I
AS
= 3.0 A,
L = 4.4 mH (per leg)
I
AS
decay linearly to 0 in 1
m
s
limited by T
J
max V
A
=1.5V
R
(Single)
(Common Cathode)
I
F(AV)
30
A
I
FSM
200
A
E
AS
20
mJ
I
AR
3.0
A
Maximum Thermal Resistance
R
JC
1.21
0.61
C/W
Max. Junction Temperature
Max. Storage Temperature
T
J
T
stg
-
-
-65 to +175
-65 to +175
C
C
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
Symbol
V
F1
V
F2
I
R1
Condition
Max.
0.73
0.66
2.0
Units
V
V
mA
@ 15A, Pulse, T
J
= 25
C
@ 15A, Pulse, T
J
= 125
C
@V
R
= 45V, Pulse,
T
J
= 25
C
@V
R
= 45V, Pulse,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
(per leg)
I
R2
15
mA
Max. Junction Capacitance
(per leg)
C
T
800
pF
SHD119222
SHD119222P
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