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參數(shù)資料
| 型號(hào)： | SHD618112BPN |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, SHD-5B, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 241K |
| 代理商： | SHD618112BPN |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address- sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATASHEET 4178, Rev. A
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC SHD-5 PACKAGE
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25
°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT PER LEG
IO
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine)
IFRM
50
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10
s, pulse)
IFSM
250
Amps
MAXIMUM JUNCTION CAPACITANCE PER LEG (Vr=400V)
CT
70
pF
MAXIMUM POWER DISSIPATION
Pd
40
W
MAXIMUM THERMAL RESISTANCE (Junction to Case)
RθJC
0.90
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg
-55 to
+200
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP If=10A PER LEG, TJ=25 °C
TJ=175 °C
1.60
2.50
1.80
3.00
Volts
MAXIMUM REVERSE CURRENT PIV = 1200V PER LEG, TJ = 25 °C
TJ = 175 °C
0.01
0.02
0.40
2.00
mA
TOTAL CAPACITIVE CHARGE PER LEG (VR=1200V, IF=10A,
di/dt=500A/
s and T
J=25°C) QC
60
N/A
nC
SHD618112P/N
SHD618112AP/N
SHD618112BP/N
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