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參數資料
| 型號： | SHD95KP6.5CAT2 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | CELL PACKAGE-2 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 228K |
| 代理商： | SHD95KP6.5CAT2 |
SENSITRON
SEN-R-924-XXX
SEMICONDUCTOR
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
TECHNICAL DATA SHEET…SURFACE MOUNTING DIE WITH HEAT ABSORBING DISKS
TRANSIENT VOLTAGE SUPPRESSER 500 WATT SERIES
Glass Passivated Die Plus Dual Heat Disks
Features:
Low Profile - - 0.071 Inch
Broad Voltage Range - - 6.8 to 200 Volts
Broad Spectrum Transient Suppression
Rapid Response - - 250 picoseconds typical
Built-in Heat Absorbing Disks
Electrically Equivalent to Mil-Prf-19500/516
Applications:
Power Line Surge Suppression
Data Line Protection
Power Bus Transient Protection
Description:This is a unipolar transient voltage
suppresser series extending from 6.8 volts to 200 volts
intended for surface mount applications.
Each device comes as a “Cell” with its own heat absorbing
disks pre-bonded at high temperature. This permits
mounting on printed circuit boards that cannot provide
their own heat sinking. Each disk is silver plated and is
solderable permitting solder down attachment and solder
strap top attachment. Each unit is bi-symmetrical so
polarity can easily be reversed.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Test Conditions
Min
TYP
Max.
Units
Response Turn-on Time
ton
250
1000
ps
Transient
Energy
Pulse
(Cell)
Ep 1
10uS rise, I= 0.5Ip at t=100us (exponential
decay)
1500
W
Transient
Energy
Pulse
(Cell)
Ep 2
10uS rise, I= 0.5Ip at t=1.0mS (exponential
decay)
500
W
Transient
Energy
Pulse
(Cell)
Ep 3
10uS rise, I= 0.5Ip at t=10mS (exponential
decay)
150
W
Transient
Energy
Pulse
(Cell)
Ep 4
10uS rise, I= 0.5Ip at t=50mS (exponential
decay)
70
W
Transient
Energy
Pulse
(Cell)
Ep 5
10uS rise, I= 0.5Ip at t=50mS (step pulse)
50
W
Electrical Parameters
See Table
Maximum
Solder
Temperature
Tmax
10 second exposure
400
C
Thermal Resistance (J-C)
ΤJC
Assume heat sink on one disk side only.
12
20
C/W
Note: Ep2 (10uS rise, I= 0.5Ip at t=1.0mS -- exponential decay) is industry standard for 100% testing.
0.088"
0.090"
Die Only
0.075
0.079
0.060
0.070
0.00 9
0.01 3
0.069"
0.073"
Cell
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