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參數(shù)資料
| 型號： | SHDG626112D |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 55K |
| 代理商： | SHDG626112D |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4185, Rev. B
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC TO-257 PACKAGE (GLASS SEALS NOT AVAILABLE FOR THIS VOLTAGE)
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC, for part numbers
with P and N suffixes)
IO
20
Amps
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC, for part number
with D suffix or without suffix)
IO
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, TC = 25
OC
IFRM
50
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10
μs, pulse) per leg, T
C = 25
OC
IFSM
250
Amps
MAXIMUM POWER DISSIPATION, TC = 25
OC
Pd
40
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL
PACKAGE For Common Cathode/Anode Configurations)
RθJC
1.00
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg
-55 to
+200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
SHDC626112
SHDC626112P
SHDC626112N
SHDC626112D
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