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參數資料
型號: SHF1180SMSTXV
廠商: SOLID STATE DEVICES INC
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 1 A, 800 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, SMS, 2 PIN
文件頁數: 1/2頁
文件大?。?/td> 111K
代理商: SHF1180SMSTXV
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0157A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
SHF11 __
__
└ Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Family/Voltage
60 = 600 V
70 = 700 V
80 = 800 V
90 = 900 V
SHF1160 & SHF1160SMS
thru
SHF1190 & SHF1190SMS
30 nsec
1 Amp
Hyper Fast Rectifier
600 - 900 V
Features:
Hyper fast recovery: 30 nsec maximum
PIV to 900 Volts, consult factory for higher voltages
Low reverse leakage current
Hermetically sealed
Void free construction
For high efficiency applications
Higher voltages available – consult factory
TX, TXV, and S level screening available2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and DC Blocking Voltage
SHF1160
SHF1170
SHF1180
SHF1190
VRRM
VRSM
VR
600
700
800
900
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25°C)
IO
1.0
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
IFSM
25
Amps
Operating & Storage Temperature
TOP & TSTG
-65 to +175
C
Maximum Thermal Resistance
Junction to Leads, L = 3/8
Junction to Tabs
RθJE
50
28
C/W
NOTES:
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
Axial Lead Diode
SMS
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