- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368614 > SI1404DH (Vishay Intertechnology,Inc.) N-Channel 25-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI1404DH |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | N-Channel 25-V (D-S) MOSFET |
| 中文描述： | N溝道25V（D-S）MOSFET |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 178K |
| 代理商： | SI1404DH |
SPICE Device Model Si1404DH
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73120
27-Aug-04
www.vishay.com
1
N-Channel 25-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
相關PDF資料 |
PDF描述 |
|---|---|
| SI1407DL | P-Channel 1.8-V (G-S) MOSFET |
| SI1410EDH | N-Channel 20-V (D-S) MOSFET |
| SI1417EDH | P-Channel 12-V (D-S) MOSFET |
| SI1426DH | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI1555DL | Complementary Low-Threshold MOSFET Pair |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI1405BDH | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI1405BDH-T1-E3 | 功能描述:MOSFET 8.0V 1.6A 2.27W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1405BDH-T1-GE3 | 功能描述:MOSFET P-CH 8V SC-70-6 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:TrenchFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| SI1405DL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI1405DL-T1 | 功能描述:MOSFET 8V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。