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參數資料
| 型號： | SI2318DS-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 40-V (D-S) MOSFET |
| 中文描述： | N通道40 - V（下局副局長）MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 79K |
| 代理商： | SI2318DS-T1 |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Stepper Motors
Load Switch
Si2318DS
Vishay Siliconix
New Product
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
www.vishay.com
1
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
40
0.045 @ V
GS
= 10 V
3.9
0.058 @ V
GS
= 4.5 V
3.5
G
S
D
Top View
Si2318DS( C8)*
2
3
TO-236
(SOT-23)
1
*Marking Code
Ordering Information:
Si2318DS-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
I
D
3.9
3.0
T
A
= 70 C
3.1
2.4
A
Pulsed Drain Current
b
I
DM
16
Continuous Source Current (Diode Conduction)
a, b
I
S
0.8
Power Dissipation
a, b
T
A
= 25 C
P
D
1.25
0.75
W
T
A
= 70 C
0.8
0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
t
a
t
5 sec
R
thJA
75
100
Steady State
120
166
C/W
Maximum Junction-to-Foot (drain)
Steady State
R
thJF
40
50
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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| SI2341DS | P-Channel 30-V (D-S) MOSFET |
| SI2341DS-T1 | P-Channel 30-V (D-S) MOSFET |
| SI3454ADV | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI3454ADV-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI2318DS-T1-E3 | 功能描述:MOSFET 40V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2318DS-T1-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 40V 3.9A TO-236 |
| SI2318DS-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-CHANNEL 40-V (D-S) MOSFET |
| SI2318DS-T1-GE3 | 功能描述:MOSFET 40V 3.9A 1.25W 45mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2318DWF | 制造商:Vishay Siliconix 功能描述:N-CH 30-V (D-S) FAST SWITCHING WFET - Tape and Reel |
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