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參數(shù)資料
| 型號： | SI4967DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | 雙P溝道的1.8 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 62K |
| 代理商： | SI4967DY |
Si4967DY
Vishay Siliconix
Document Number: 70813
S-31989—Rev. C, 13-Oct-03
www.vishay.com
1
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.023 @ V
GS
= -4.5 V
0.030 @ V
GS
= -2.5 V
0.045 @ V
GS
= -1.8 V
-7.5
-12
-6.7
-5.4
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
D
2
P-Channel MOSFET
Ordering Information:
Si4967DY
Si4967DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
-12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
I
D
-7.5
T
A
= 70 C
-6.1
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
-30
-1.7
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
2.0
W
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
62.5
C/W
Steady State
93
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec.
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|---|---|
| SI4967DY-E3 | 功能描述:MOSFET 12V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4967DY-T1 | 功能描述:MOSFET 12V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4967DY-T1-E3 | 功能描述:MOSFET 12V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4967DY-T1-GE3 | 功能描述:MOSFET 12V 7.5A 2.0W 23mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4971DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 25-V (G-S) MOSFET |
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