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參數資料
| 型號： | SI5905DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | 雙P溝道的1.8 V（GS）的MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 113K |
| 代理商： | SI5905DC |
Si5905DC
Vishay Siliconix
Document Number: 71066
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
0.090 @ V
GS
= --4.5 V
4.1
--8
0.130 @ V
GS
= --2.5 V
3.4
0.180 @ V
GS
= --1.8 V
2.9
Bottom View
1206-8 ChipFE
T
t
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
1
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Marking Code
DB
XX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si5905DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
--8
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
4.1
2.9
3.0
T
A
= 85
_
C
2.2
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
10
--1.8
--0.9
Maximum Power Dissipation
a
T
A
= 25
_
C
T
A
= 85
_
C
P
D
2.1
1.1
W
1.1
0.6
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
--55 to 150
_
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
≤
5 sec
R
thJA
50
60
Steady State
90
110
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
40
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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