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參數資料
| 型號： | Si6820DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel, Reduced Qg, MOSFET with Schottky Diode |
| 中文描述： | N溝道，降低Qg和，MOSFET的肖特基二極管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 62K |
| 代理商： | SI6820DQ |
Si6820DQ
Vishay Siliconix
Document Number: 70790
S-56936—Rev. C, 23-Nov-98
www.vishay.com FaxBack 408-970-5600
2-1
N-Channel, Reduced Q
g
, MOSFET with Schottky Diode
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.160 @ V
GS
= 4.5 V
0.260 @ V
GS
= 3.0 V
1.9
1.5
V
KA
(V)
V
F
(v)
Diode Forward Voltage
I
F
(A)
20
0.5 V @ 1 A
1.5
Si6820DQ
D
S
S
G
1
2
3
4
8
7
6
5
K
A
A
A
TSSOP-8
Top View
D
G
S
K
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V
DS
V
KA
20
V
Reverse Voltage (Schottky)
20
Gate-Source Voltage (MOSFET)
V
GS
12
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a, b
T
A
= 25 C
I
D
1.9
A
T
A
= 70 C
1.5
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
I
DM
I
S
I
F
I
FM
8
1.0
Average Foward Current (Schottky)
1.5
Pulsed Foward Current (Schottky)
30
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
P
D
1.2
W
0.76
Maximum Power Dissipation (Schottky)
a, b
1.0
0.64
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t
10 sec)
a
MOSFET
thJA
R
105
C/W
Schottky
125
Maximum Junction-to-Ambient (t = steady state)
a
MOSFET
115
Schottky
130
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI6820DQ-T1 | 功能描述:MOSFET 20V 1.9A 1.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6820DQ-T1-E3 | 功能描述:MOSFET 20V 1.9A 1.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6821DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel, Reduced Qg, MOSFET with Schottky Diode |
| SI6821DQ-T1 | 功能描述:MOSFET 20V 1.7A 1.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6862DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET with Current Sense |
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