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參數資料
| 型號： | SI6882EDQ-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6000 mA, 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 97K |
| 代理商： | SI6882EDQ-T1 |
Vishay Siliconix
Si6882EDQ
New Product
Document Number: 71984
S-60422-Rev. B, 20-Mar-06
www.vishay.com
1
N-Channel 1.8-V (G-S) Battery Switch, ESD Protection
FEATURES
TrenchFET Power MOSFET
ESD Protected: 4000 V
Common Drain
APPLICATIONS
1-2 Cell Battery Protection Circuitry
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)ID (A)
24
0.019 at VGS = 4.5 V
7.5
0.021 at VGS = 3.7 V
6.9
0.023 at VGS = 2.5 V
6.5
0.027 at VGS = 1.8 V
6.0
Si6882EDQ
D
S1
G1
1
2
3
4
8
7
6
5
D
S2
G2
TSSOP-8
Top View
Ordering Information: Si6882EDQ-T1
Si6882EDQ-T1-E3 (Lead (Pb)-free)
D
G1
S1
D
G2
S2
N-Channel
* 1.5 k
Ω
* 1.5 k
Ω
* Typical value by design
Notes:
a. Surface Mounted on FR4 Board.
b. t
≤ 10 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
VDS
24
V
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
7.5
6
A
TA = 70 °C
65
Pulsed Drain Current (10 s Pulse Width)
IDM
30
Continuous Source Current (Diode Conduction)a
IS
1.6
1.08
Maximum Power Dissipationa
TA = 25 °C
PD
1.78
1.19
W
TA = 70 °C
1.14
0.76
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 10 sec
RthJA
55
70
°C/W
Steady State
85
105
Maximum Junction-to-Foot (Drain)a
Steady State
RthJF
35
45
Available
Pb-free
RoHS*
COMPLIANT
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