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參數資料
| 型號： | SI6968BEDQ-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection |
| 中文描述： | 雙N溝道的2.5 V（GS）的MOSFET的共同排水，ESD保護 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 53K |
| 代理商： | SI6968BEDQ-T1 |
FEATURES
TrenchFET Power MOSFET
ESD Protected: 3000 V
Si6968BEDQ
Vishay Siliconix
Document Number: 72274
S-31362—Rev. A, 30-Jun-03
www.vishay.com
1
Dual N-Channel 2.5-V (G-S) MOSFET
Common Drain, ESD Protection
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.022 @ V
GS
= 4.5 V
6.5
0.030 @ V
GS
= 2.5 V
5.5
D
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
S
2
S
2
G
2
TSSOP-8
Top View
D
G
1
S
1
D
G
2
S
2
N-Channel
N-Channel
*300
*300
*Typical value by design
Ordering Information:
Si6968BEDQ-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
20
V
Gate-Source Voltage
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
6.5
5.2
5.5
3.5
A
Pulsed Drain Current
I
DM
I
S
30
Continuous Source Current (Diode Conduction)
a
1.5
1.0
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
1.5
1.0
W
0.96
0.64
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
72
83
Steady-State
100
120
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
55
70
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI6968BEDQ-T1-E3 | 功能描述:MOSFET 20V 6.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6968BEDQ-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-CH 2.5-V (G-S) MOSFET COMMONDRAIN ESD |
| SI6968BEDQ-T1-GE3 | 功能描述:MOSFET Dual N-Ch MOSFET 20V 22mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6968DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch |
| SI6968DQ-T1 | 功能描述:MOSFET 20V 6.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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