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參數資料
| 型號： | SI7806BDN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) Fast Switching MOSFET |
| 中文描述： | N溝道30 V的（副）快速開關MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 113K |
| 代理商： | SI7806BDN |
Vishay Siliconix
Si7806BDN
New Product
Document Number: 73081
S-60790-Rev. B, 08-May-06
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
TrenchFET
Power MOSFETS
PWM Optimized
New Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile
APPLICATIONS
DC/DC Converters
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
Ω
)
I
D
(A)
30
0.0145 at V
GS
= 10 V
12.6
0.0205 at V
GS
= 4.5 V
10.6
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-
8
Bottom
V
ie
w
Ordering Information: Si7
8
06BD
N
-T1-E3 (Lead (P
b
)-free)
N
-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
10 secs
Steady State
Unit
30
± 20
V
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
T
A
= 70 °C
I
D
12.6
10.1
8.0
6.4
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
40
3.2
3.8
2.0
1.3
1.5
0.8
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
Maximum Junction-to-Ambient
a
t
≤
10 sec
Steady State
Steady State
R
thJA
°C/W
Maximum Junction-to-Case (Drain)
R
thJC
RoHS
COMPLIANT
相關PDF資料 |
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| SI7806BDN-T1-E3 | N-Channel 30-V (D-S) Fast Switching MOSFET |
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| SI7840DP | N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7844DP | Dual N-Ch MOSFET plus Schottky diode, |
| SI7850DP | N-Channel 60-V (D-S) Fast Switching MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7806BDN-T1-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7806DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7806DN-T1-E3 | 功能描述:MOSFET 30V 14.4A 3.8W 11mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7808 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
| SI7809 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
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