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參數資料
| 型號： | Si7888DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 45K |
| 代理商： | SI7888DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
Optimized for “High-Side” Synchronous
Rectifier Operation
100% R
g
Tested
APPLICATIONS
DC/DC Converters
Si7888DP
Vishay Siliconix
Document Number: 71876
S-31727—Rev. B, 18-Aug-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.012 @ V
GS
= 10 V
0.020 @ V
GS
= 4.5 V
15.7
12.1
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Ordering Information: Si7888DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
15.7
9.4
T
A
= 70 C
12.5
7.5
A
Pulsed Drain Current
I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
4.1
1.5
Avalanche Current
L= 0 1 mH
L= 0.1 mH
I
AS
20
A
Single Pulse Avalanche Energy
E
AS
20
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.0
1.8
W
T
A
= 70 C
3.2
1.1
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
a
t
10 sec
R
thJA
21
25
Steady State
55
70
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
2.4
3.0
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7888DP-T1-E3 | 功能描述:MOSFET 30V 15.7A 5.0W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7888DP-T1-GE3 | 功能描述:MOSFET 30V 15.7A 5.0W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7892ADP-T1-E3 | 功能描述:MOSFET 30V 25A 5.4W 4.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7892BDP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel, 30-V (D-S) MOSFET |
| SI7892BDP-T1-E3 | 功能描述:MOSFET 30V 25A 0.0042Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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