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參數資料
| 型號： | SI7991DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 中文描述： | 雙P溝道30V的（D-S）MOSFET |
| 文件頁數： | 1/5頁 |
| 文件大小： | 71K |
| 代理商： | SI7991DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK Package
with Low 1.07-mm Profile
APPLICATIONS
Load Switch
Notebook PCs
Desktop PCs
Game Stations
Battery Switch
Si7991DP
Vishay Siliconix
New Product
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.023 @ V
GS
=
10 V
10.2
0.035 @ V
GS
=
4.5 V
8.1
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information: Si7991DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
10.2
6.6
T
A
= 70 C
8.2
5.3
A
Pulsed Drain Current
I
DM
30
continuous Source Current (Diode Conduction)
a
I
S
2.9
1.2
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.4
W
T
A
= 70 C
2.2
0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
28
35
Steady State
60
85
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
3
3.7
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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PDF描述 |
|---|---|
| SI7991DP-T1 | Dual P-Channel 30-V (D-S) MOSFET |
| SI8251 | DIGITAL POWER CONTROLLER |
| SI8251-IM | DIGITAL POWER CONTROLLER |
| SI8251-IQ | DIGITAL POWER CONTROLLER |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7991DP-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI7994DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI7994DP-T1-GE3 | 功能描述:MOSFET 30V 60A 46W 5.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7997DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30 V (D-S) MOSFET |
| SI7997DP-T1-GE3 | 功能描述:MOSFET -30V 5.5mOhm@10V 60A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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