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參數(shù)資料
型號(hào): SI9426DY
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: Single N-Channel, 2.5V Specified MOSFET
中文描述: 10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 49K
代理商: SI9426DY
January 2001
2001 Fairchild Semiconductor International
SI9426DY Rev A (W)
SI9426DY
Single N-Channel, 2.5V Specified MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s high cell density
DMOS technology process that has been especially
tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching
performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Applications
DC/DC converter
Load switch
Features
10.5 A, 20 V.
R
DS(ON)
= 13.5 m
@ V
GS
= 4.5 V
R
DS(ON)
= 16 m
@ V
GS
= 2.7 V
High cell density for extremely low R
DS(ON)
High power and current handling capability in a widely
used surface mount package
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
20
±
8
10.5
30
2.5
1.2
1
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
9426
SI9426DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
S
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