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參數(shù)資料
| 型號(hào)： | SIGC06T120CS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 77K |
| 代理商： | SIGC06T120CS |
SIGC06T120CS
Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology
180μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
SGP02N120
Applications:
drives, SMPS, resonant
applications
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-A4115-
A001
SIGC06T120CS
1200V
2A
2.45 x 2.25 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
2.45 x 2.25
Area total / active
5.512 / 2.5
Emitter pad size
1.03x1.29
Gate pad size
0.42x0.56
mm
2
Thickness
180
μm
Wafer size
150
mm
Flat position
0
deg
Max.possible chips per wafer
2794 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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