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參數資料
| 型號： | SIGC156T120R2C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 75K |
| 代理商： | SIGC156T120R2C |
SIGC156T120R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology 200μm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
integrated gate resistor
Chip Type
This chip is used for:
power module
BSM100GD120DN2
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-
A4661-A003
SIGC156T120R2C 1200V 100A 12.59 X 12.59 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
12.59 X 12.59
Emitter pad size
8 x ( 3.98 x 2.38 )
Gate pad size
1.46 x 0.8
Area total / active
158.5 / 132.6
mm
2
Thickness
200
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
82 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SIGC156T120R2CL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC156T120R2CQ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in Fieldstop-technology |
| SIGC156T120R2CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC156T60NR2C | 功能描述:IGBT 晶體管 IGBT CHIP IN NPT TECHNOLOGY RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SIGC156T60SNR2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology 100μm chip |
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