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參數資料
| 型號： | SIGC223T120R2CL |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 76K |
| 代理商： | SIGC223T120R2CL |
SIGC223T120R2CL
Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology
180μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
IGBT-Modules
BSM150GB120DLC
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-A4286-
A101
SIGC223T120R2CL
1200V 150A
14.4 x 15.5 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
14.4 x 15.5
Area total / active
223.2 / 189.9
Emitter pad size
8x( 3.67x6.77 )
Gate pad size
1.49 x 1.51
mm
2
Thickness
180
μm
Wafer size
150
mm
Flat position
90
deg
Max.possible chips per wafer
54 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SIGC223T120R2CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T120C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T120CL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T120CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T120CS2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
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