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參數資料
| 型號： | SIR95-21C/TR9 |
| 廠商： | EVERLIGHT ELECTRONICS CO LTD |
| 元件分類： | 紅外LED |
| 英文描述： | 1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm |
| 封裝： | ROHS COMPLIANT, MINIATURE, PLASTIC, SMD, 2 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 170K |
| 代理商： | SIR95-21C/TR9 |
Everlight Electronics Co., Ltd.
http://www.everlight.com
Rev 2
Page: 1 of 10
Device No：DIR-0000097
Prepared date：02-18-2009
Prepared by：Jaine Tsai
Technical Data Sheet
1.9mm Round Subminiature “Yoke” Lead Infrared LED
SIR95-21C/TR9
Features
Good spectral matching
to Si photodetector
Low forward voltage
Peak wavelength λp=875nm
Package in 12mm tape on 7” diameter reel
Pb free
The product itself will remain within RoHS compliant version.
Descriptions
SIR95-21C/TR9 is an infrared emitting diode in miniature
SMD package which is molded in a water clear plastic with
spherical top view lens. The device is spectrally matched
with silicon photodiode and phototransistor.
Applications
PCB mounted infrared sensor
Infrared remote control units with high power requirement
Scanner
Infrared applied system
Device Selection Guide
Chip
LED Part No.
Material
Lens Color
SIR95-21C/TR9
GaAlAs
Water clear
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SIRA00DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIRA00DP-T1-GE3 | 功能描述:MOSFET 30V 1mOhm@10V 60A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SIRA02DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIRA02DP-T1-GE3 | 功能描述:MOSFET 30V 2mOhm@10V 50A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SIRA04DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
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