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參數資料
| 型號： | 2SK304F |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應| N溝道| 30V的五（巴西）直| 5mA的我（直）| SPAK |
| 文件頁數： | 1/10頁 |
| 文件大小： | 54K |
| 代理商： | 2SK304F |
2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-684G (Z)
8th. Edition
February 1999
Features
Low on-resistance
R
DS(on) = 4.5 m typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3056-Z | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 32A I(D) | TO-263AB |
| 2SK3058-Z | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3060 | 2SK3060 Data Sheet | Data Sheet[04/2001] |
| 2SK3060-S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3060-Z | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3050 | 制造商:ROHM 制造商全稱:Rohm 功能描述:10V Drive Nch MOS FET |
| 2SK3050_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:10V Drive Nch MOS FET |
| 2SK3050TL | 功能描述:MOSFET POWER MOSFET SURF MOUNT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3051 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator DC?DC Converter, and Motor Drive |
| 2SK3051_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter, and Motor Drive Applications |
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