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參數資料
| 型號： | HMN1288J-70I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
| 中文描述： | 非易失性SRAM模塊為1Mbit（128K的× 8位），34Pin - JLCC，5V的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 158K |
| 代理商： | HMN1288J-70I |
HANBit
HMN1288J
URL: www.hbe.co.kr 1 HANBit Electronics Co.,Ltd.
Rev.0.0 (FEBRUARY/ 2002)
GENERAL DESCRIPTION
The HMN1288J Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits.
The HMN1288J has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after Vcc
returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after V
CC
returns valid.
The HMN1288J uses extremely low standby current CMOS SRAM
’
s, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w
Access time : 55, 70 ns
w
High-density design : 4Mbit Design
w
Battery internally isolated until power is applied
w
Industry-standard 34-pin 128K x 8 pinout
w
Unlimited write cycles
w
Data retention in the absence of V
CC
w
10-years minimum data retention in absence of power
w
Automatic write-protection during power-up/power-down
cycles
w
Data is automatically protected during power loss
w
Conventional SRAM operation; unlimited write cycles
OPTIONS MARKING
w
Timing
55 ns -55
70 ns -70
Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V
Part No. HMN1288J
PIN ASSIGNMENT
JLCC
TOP VIEW
31
30
29
28
27
26
25
24
23
22
21
20
19
18
34
33
32
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
1
2
A(0)
A(1)
A(2)
A(3)
A(4)
A(5)
A(6)
A(7)
A(8)
A(9)
A(10)
A(11)
A(12)
A(13)
A(14)
NC
NC
A(15)
A(16)
/RST
VCC
D(0)
VSS
D(1)
D(2)
D(3)
D(4)
D(5)
D(6)
D(7)
/CE
/OE
/WE
/NBW
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| HMN1M8DV | Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V |
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| HMN1M8DV-150I | Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HMN1M8D | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V |
| HMN1M8D-120 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V |
| HMN1M8D-120I | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V |
| HMN1M8D-150 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V |
| HMN1M8D-150I | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V |
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