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參數資料
| 型號： | H1061 |
| 廠商： | PMC-Sierra, Inc. |
| 英文描述： | TRIPLE DIFFUSED SILICON NPN TRANSISTOR |
| 中文描述： | 三重擴散硅NPN晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 157K |
| 代理商： | H1061 |
H1061
P
MC Components Pte Ltd.
,
Singapore, 2000
TRIPLE DIFFUSED SILICON NPN TRANSISTOR
… designed for low frequency power amplifier
MAXIMUM RATINGS
Characteristic
Symbol
Collector Base Voltage
V
CBO
Collector Emitter Voltage
V
CEO
Emitter Base Voltage
V
EBO
Collector Current (DC)
I
C
Collector Current (Peak)
I
C
Collector power Dissipation
P
C
Junction Temperature
T
J
Storage Temperature
T
stg
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Collector Cut Off Current
I
CBO
V
CB
= 80V, I
E
= 0A
Collector – Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0A
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 0.1A
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
= 2A, I
B
= 0.2A
Base Emitter Voltage
V
BE
V
CE
= 4V, I
C
= 1A
Transition Frequency
f
T
V
CE
= 5V, I
C
= 0.5A
Collector Out put Capacitance
C
ob
V
CB
= 20V, I
E
= 0A, f=1MHz
Classification of h
FE
Rank
B
Range
60 to 120
100-200
P
MC
reserves the right to make changes without further notice to any products herein.
P
MC
makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does
P
MC
assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the
reader therefore we shall not undertake any responsibility for the exercise of rights by third parties.
Value
100
80
5
4
8
40
150
-55~150
Unit
V
V
V
A
A
W
°
C
°
C
Min.
-
80
60
35
-
-
-
-
Typ.
-
-
-
-
-
-
10
40
Max.
100
-
200
-
1
1.5
-
-
Unit
μ
A
V
-
-
V
V
MHz
Pf
C
HIGH POWER
DISSIPATION
MEDIUM SPEED
POWER
SWITCHING
TO – 220AB
1 : Base
2 : Collector (Heat Sink)
3 : Emitter
Unit in mm
TO-220AB
Weight: 1.9g
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