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參數資料
| 型號： | SKAI3001GD121452W |
| 廠商： | SEMIKRON |
| 英文描述： | 1200V IGBT Advanced Drive System |
| 中文描述： | 1200伏IGBT的先進驅動系統 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 279K |
| 代理商： | SKAI3001GD121452W |
2
Power Electronic Systems – SEMISTACK
03-03-2005
by SEMIKRON
SEMISTACK - SKAI
SKAI Solutions
1200V IGBT Advanced
Drive System
SKAI 3001GD12 1452 W
SemiKron Advanced
Integration (SKAI) module
Liquid-cooled version
Preliminary Data
Features
1200V Trench IGBT technology on AlN
DCB substrate
Integrated DC-link film capacitor
Pressure contact technology for
improved power cycling performance
Optimal thermal management with
integrated liquid-cooled heatsink
Two integrated current sensors with
option to include three
Integrated gate drive and power supply
with under-voltage protection. 25-pin DB
connector is standard on driver only
versions
Option to include an integrated controller
based on TMS320LF2407ADSP. 14-pin
AMP SEAL connector is standard on
controller versions.
Typical Applications
Vehicles
Hybrid vehicles
Motor Drives
Regenerative Drives
1)
Contact SEMIKRON for power loss
calculations
2)
"s" referenced to built-in Temp. Sensor
3)
50% Water, 50% Glycol
Circuit
B6CI
I
rms
300
V
dc
900
Types
SKAI 3001GD12 1452 W
Symbol
I
rms1)
Conditions
no overload, T
coolant
= 50°C, 5kHz, p.f.=0,8
overload, t<20s
Values
300
400
1200
Units
A
A
V
V
CES
IGBT
T
j
= 125°C
T
j
= 125°C
400A, T
j
= 25 / 125 °C
V
cc
= 600/800V, I
c
= 400A, T
j
= 125°C
Inverse diode
T
j
= 125°C
T
j
= 125°C
400A, T
j
= 25 / 125 °C
V
cc
= 600/800V, I
c
= 400A, T
j
= 125°C
Thermal Characteristics / Heatsink
per IGBT
per diode
Heatsink to coolant
3)
, flow rate V
l
= 15 l/min
Heatsink to coolant
3)
, flow rate V
l
= 5 l/min
Pressure drop, Coolant flow rate V
l
= 5 l/min
Pressure drop, Coolant flow rate V
l
= 15 l/min
Capacitor bank
total equivalent capacitance
max. DC voltage applied to capacitor bank
Driver
Power supply: typ value
Power supply: min / max values
Supply current
Primary to Secondary Side
Max. Switching Frequency
power terminals to heatsink and signal connector:
AC, 1 min.
Junction temperature
Storage Temperature
Operating ambient temperature
Protection
Short Circuit Protection
Over-Temp. Protection
V
CC
Overvoltage Protection
Dimensions
V
CEO
r
CE
V
CEsat
E
ON
+ E
OFF
0,85
3,1
V
m
V
mJ
1,76 / 2,2
101 / 151
V
TO
r
T
V
F
=V
EC
E
ON
+ E
OFF
0,80
1,87
V
m
V
mJ
1,56 / 1,55
32 / 38
R
thjs2)
R
thjs2)
R
thsa2)
0,065
0,13
9,3
13,4
0,05
0,55
K/W
K/W
K/kW
K/kW
bar
bar
Pa
DR
C
eqvl
V
DC
max
1
mF
V
900
V
s
24
V
V
8 / 30
500
15
15
I
s
dV/dt
f
SW
max
mA
kV/μs
kHz
V
isol
3000
V
T
vj
T
stg
T
amb
-40...+150
-40...+125
-40...+85
°C
°C
°C
I
TRIPSC
T
TRIP
U
DCTRIP
1000
115
917
A
°C
V
L x W x H
Length x Width x Height
400 x 215 x
100
8,2
mm
w
approx.
kg
SKAI
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