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參數資料
| 型號： | SKCD18C120I |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 整流器 |
| 英文描述： | 1200 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/2頁 |
| 文件大小： | 120K |
| 代理商： | SKCD18C120I |
by SEMIKRON
B 15 – 21
0896
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
VRRM
1200
V
IFSM
(
≥ 2 bondwires 300 m )
tp = 10 ms; sin; Tj = 150
°C180
A
I
2
ttp = 10 ms; sin; Tj = 150
°C162
A
2s
Tsolder
max. 120 s (transfer)
375
°C
Tvj, Tstg
min
– 55
°C
Tvj, Tstg
max
+ 150
°C
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IRM
Tj = 25
°C/125 °C; VRRM
0,1 / 2
mA
VF
IF = 15 A;
Tj = 25
°C
2,0
2,5
V
Tj = 125
°C
1,8
2,3
V
VF
IF = 22 A;
Tj = 25
°C
2,3
V
Tj = 125
°C
2,15
V
VT(TO)
Tj = 125
°C, see Fig. 1
1,0
1,2
V
rT
Tj = 125
°C50
75
m
IRRM
IF = 15 A;
2)
Tj = 125
°C16
A
Qrr
IF = 15 A;
Tj = 25
°C
1,5
C
2)
Tj = 125
°C
2,7
C
Tsolder
10 min
250
°C
Tsolder
5 min
320
°C
Mechanical Data
Atot
total area
17,6
mm
2
Aact.
active area
9,2
mm
2
w
weight
12
mg
Supplied on frames
Please contact factory
1)
Tcase = 25
°C, unless otherwise specified
2)
VR = 600 V; – diF/dt = 400 A/
s;
3)
CAL = Controlled Axial Lifetime Technology
4)
Soldered on DCB ceramic (Al2O3) 0,4 mm thick
on a 3 mm copper base plate Rthjc = 1,5 K/W
Tjm = 150
°C; Tcase = 80 °C.
5)
DCB = Direct Copper Bonding Technology
SEMICELL
CAL - Diode Chips
3)
SKCD 18C 120 I
4,2 x 4,2 mm; 15 A
4); 1200 V
Features
Low voltage drop
low temperature dependence
Very soft reverse recovery
under all conditions
CAL = Controlled Axial
Lifetime Technology
Top side = Al for bonding
by aluminum wire
Bottom = 4 layer metallisation
for soldering
Typical Applications
Inverse diode for IGBT
(in inverter drives)
Freewheeling diode in brake
choppers or step-up choppers
with IGBT or MOSFET
UPS Uninteruptible Power
Supplies
Hybrid circuits for static power
converters
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