
by SEMIKRON
0698
B 16 – 41
SKiiP 82 AHB 08
Absolute Maximum Ratings
Symbol Conditions
1)
Bridge Rectifier
V
RRM
I
D
I
FSM
/I
TSM
I2t
t
p
= 10 ms; sin. 180 °C, T
j
= 25 °C
IGBT Chopper
V
CES
V
GES
I
C
I
CM
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
Freewheeling Diode
2)
V
RRM
I
F
I
FM
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
T
j
T
j
T
stg
V
isol
AC, 1 min.
Values
Units
T
heatsink
= 80 °C
t
p
= 10 ms; sin. 180 °C, T
j
= 25 °C
800
35
550
5000
V
A
A
A2s
T
heatsink
= 25 / 80 °C
600
± 20
30 / 20
60 / 40
V
V
A
A
T
heatsink
= 25 / 80 °C
600
57 / 38
114 / 76
– 40 ... + 150
– 40 ... + 125
– 40 ... + 125
2500
V
A
A
°C
°C
°C
V
Diode & IGBT
Thyristor
Characteristics
Symbol Conditions
1)
Diode - Rectifier
V
F
V
TO
r
T
R
thjh
per diode
Thyristor - Rectifier
V
T
V
T
(TO)
r
T
R
thjh
I
GD
V
GT
I
GT
I
H
I
L
dv/dt
CR
di/dt
CR
IGBT - Chopper
V
CEsat
t
d(on)
t
r
t
d(off)
t
f
E
on
+ E
off
C
ies
R
thjh
per IGBT
min.
typ.
max.
Units
I
F
= 35 A
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
–
–
–
–
1,15
0,8
10
–
–
–
–
1,6
V
V
m
K/W
I
F
= 75 A
T
j
= 125 °C
T
j
= 125 °C
per thyristor
T
j
= 125 °C
T
j
= 25 °C
–
–
–
–
3
–
–
–
–
500
–
–
–
–
–
–
–
–
200
400
–
–
1,8
1,0
10
1,3
–
3
100
–
–
–
125
V
V
m
K/W
mA
V
mA
mA
mA
V/
μ
s
A/
μ
s
I
C
= 30 A
V
CC
= 300 V; V
GE
= ± 15 V
I
C
= 30 A; T
j
= 125 °C
R
gon
= R
goff
= 33
inductive load
T
j
= 25 (125) °C
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
–
–
–
–
–
–
–
–
2,1(2,2)
50
80
250
500
4,0
1,6
–
2,7(2,8)
100
160
370
750
–
–
1,8
V
ns
ns
ns
ns
mJ
nF
K/W
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
MiniSKiiP 8
SEMIKRON integrated
intelligent Power
SKiiP 82 AHB 08
half controlled
3-phase bridge rectifier +
IGBT braking chopper
Case M8a
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics see
page B 16 – 3
Options
also available with uncontrolled
rectifier (called 82 ANB 08)
also available with faster IGBTs
(type ... 063), data sheet on
request
1)
T
heatsink
= 25 °C, unless otherwise
specified
2)
CAL = Controlled Axial Lifetime
Technology (soft and fast recovery)