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參數(shù)資料
| 型號(hào)： | SKM100GB125DN |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SEMITRANSR M Ultra Fast IGBT Modules |
| 中文描述： | SEMITRANSR M超快速IGBT模塊 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | SKM100GB125DN |
by SEMIKRON
000831
B 6 – 37
SKM 100 GB 125 DN
Absolute Maximum Ratings
Symbol Conditions
1)
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
IEC 68 T.1
Inverse Diode
I
F
= –I
C
I
FM
= –I
CM
I
FSM
I
2
t
t
p
= 10 ms; T
j
= 150 °C
Values
Units
V
V
A
A
V
W
°C
V
R
GE
= 20 k
T
case
= 25/80 °C
T
case
= 25/80 °C; t
p
= 1 ms
per IGBT, T
case
= 25 °C
AC, 1 min.
IEC 60721-3-3
1200
1200
100 / 80
200 / 160
± 20
690
–40 ... + 150 (125)
2500
class 3K7/IE32
40/125/56
T
case
= 25/80 °C
T
case
= 25/80 °C; t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 °C
95 / 65
200 / 160
720
2600
A
A
A
A
2
s
Characteristics
Symbol Conditions
1)
V
(BR)CES
V
GE(th)
I
CES
V
GE
= 0
V
CE
= V
CES
T
j
= 125 °C
V
GE
= 20 V, V
CE
= 0
I
C
= 75 A
I
C
= 100 A
V
CE
= 20 V, I
C
= 75 A
C
CHC
C
ies
C
oes
C
res
L
CE
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inverse Diode
8)
V
F
= V
EC
V
F
= V
EC
V
TO
r
t
I
RRM
Q
rr
I
F
= 75 A; T
j
= 25 (125) °C
2)
Thermal characteristics
R
thjc
R
thjc
R
thch
per module
min.
≥
V
CES
4,5
typ.
max.
Units
V
V
mA
mA
nA
V
V
S
pF
nF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
I
GES
V
CEsat
V
CEsat
g
fs
V
GE
= 0, I
C
= 4 mA
V
GE
= V
CE
, I
C
= 2 mA
T
j
= 25 °C
V
GE
= 15 V;
T
j
= 25 °C
31
5,5
0,1
6
3,3
3,8
6,5
1,5
300
3,65
per IGBT
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
5
720
380
350
6,6
900
500
25
V
CC
= 600 V
V
GE
= –15 V / +15 V
3)
I
C
= 75 A, ind. load
R
Gon
= R
Goff
= 8
T
j
= 125 °C
80
40
360
20
9
3,5
I
F
= 75 A
I
F
= 100 A
T
j
= 125 °C
T
j
= 125 °C
I
F
= 75 A; T
j
= 25 (125) °C
2)
V
GE
= 0 V;
T
j
= 25 (125) °C
2,0(1,8)
2,25(2,05)
12
27(40)
3(10)
2,5
1,2
15
V
V
V
m
A
μ
C
per IGBT
per diode
0,18
0,50
0,05
°C/W
°C/W
°C/W
SEMITRANS
M
Ultra Fast IGBT Modules
SKM 100 GB 125 DN
Features
N channel, homogeneous Si
Low inductance case
Short tail
current with low
temperature dependence
High short circuit capability,
self limiting to 6 * I
cnom
Fast & soft inverse CAL diodes
8)
Isolated copper baseplate using
DCB Direct Copper Bonding
Technology
Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
Switched mode power supplies
at f
sw
> 20 kHz
Resonant inverters up to
100 kHz
Inductive heating
Electronic welders at
f
sw
> 20 kHz
1)
T
case
= 25 °C, unless otherwise
specified
2)
I
F
= – I
C
, V
R
= 600 V,
–di
F
/dt = 800 A/
μ
s, V
GE
= 0 V
3)
Use V
GEoff
= –5... –15 V
8)
CAL = Controlled Axial Lifetime
Technology
GB
SEMITRANS 2N (low inductance)
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