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參數(shù)資料
| 型號(hào)： | SKM50GB063D |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 功率晶體管 |
| 英文描述： | SEMITRANS M Superfast NPT-IGBT Modules |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT |
| 封裝： | CASE D 61, SEMITRANS 2, 7 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 215K |
| 代理商： | SKM50GB063D |
by SEMIKRON
0898
B 6
–
7
Absolute Maximum Ratings
Symbol Conditions
1)
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
DIN IEC 68 T.1
Inverse Diode
I
F
= –I
C
I
FM
= –I
CM
I
FSM
I
2
t
t
p
= 10 ms; T
j
= 150 °C
Values
Units
V
V
A
A
V
W
°C
V
R
GE
= 20 k
T
case
= 25/75 °C
T
case
= 25/75 °C; t
p
= 1 ms
per IGBT, T
case
= 25 °C
AC, 1 min.
DIN 40040
600
600
70 / 50
140 / 100
± 20
250
–40 ... +150 (125)
2500
Class F
40/125/56
T
case
= 25/80 °C
T
case
= 25/80 °C; t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 °C
75 / 50
140 / 100
440
970
A
A
A
A
2
s
Characteristics
Symbol Conditions
1)
V
(BR)CES
V
GE(th)
I
CES
V
GE
= 0
V
CE
= V
CES
T
j
= 125 °C
V
GE
= 20 V, V
CE
= 0
I
C
= 30 A
I
C
= 50 A
V
CE
= 20 V, I
C
= 50 A
C
CHC
C
ies
C
oes
C
res
L
CE
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inverse Diode
8)
V
F
= V
EC
I
F
= 50 A
min.
≥
V
CES
4,5
–
–
–
–
–
20
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,1
3
–
1,8(2,0)
2,1(2,4)
–
–
2800
300
200
–
50
40
300
30
2,5
1,8
max.
–
6,5
1,5
–
100
–
2,5(2,8)
–
350
–
–
–
30
–
–
–
–
–
–
Units
V
V
mA
mA
nA
V
V
S
pF
pF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
I
GES
V
CEsat
V
CEsat
g
fs
V
GE
= 0, I
C
= 1,5 mA
V
GE
= V
CE
, I
C
= 1 mA
T
j
= 25 °C
V
GE
= 15 V;
T
j
= 25 (125) °C
per IGBT
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
V
CC
= 300 V
V
GE
= –15 V / +15 V
3)
I
C
= 50 A, ind. load
R
Gon
= R
Goff
= 22
T
j
= 125 °C
V
TO
r
t
I
RRM
Q
rr
Thermal characteristics
R
thjc
R
thjc
R
thch
per module
V
GE
= 0 V;
T
j
= 25 (125 °C)
T
j
= 125 °C
T
j
= 125 °C
I
F
= 50 A; T
j
= 125 °C
2)
I
F
= 50 A; T
j
= 125 °C
2)
–
–
–
–
–
1,45(1,35)
–
10
31
3,2
1,7
0,9
15
–
–
V
V
m
A
μ
C
per IGBT
per diode
–
–
–
–
–
–
0,5
1,0
0,05
°C/W
°C/W
°C/W
SEMITRANS
M
Superfast NPT-IGBT
Modules
SKM 50 GB 063 D
Features
N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
Low tail current with low
temperature dependence
High short circuit capability, self
limiting if term. G is clamped to E
Pos. temp.-coeff. of V
CEsat
50 % less turn off losses
9)
30 % less short circuit current
9)
Very low C
ies
, C
oes
, C
res 9)
Latch-up free
Fast & soft inverse CAL diodes
8)
Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
Switching (not for linear use)
Switched mode power supplies
UPS
Three phase inverters for servo /
AC motor speed control
Pulse frequencies also above
10 kHz
1)
T
case
= 25 °C, unless otherwise
specified
2)
I
F
= – I
C
, V
R
= 300 V,
–di
F
/dt = 800 A/
μ
s, V
GE
= 0 V
3)
Use V
GEoff
= –5... –15 V
8)
CAL = Controlled Axial Lifetime
Technology
9)
Compared to PT-IGBT
Cases and mech. data
→
B 6
– 12
GB
SEMITRANS 2
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