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參數資料
| 型號： | SKM600GA12V |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 890 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | SEMITRANS 4, CASED59-5 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 251K |
| 代理商： | SKM600GA12V |
SKM600GA12V
by SEMIKRON
Rev. 0 – 23.12.2009
1
SEMITRANS 4
GA
SKM600GA12V
Target Data
Features
VCE(sat) with positive temperature
coefficient
High short circuit capability, self
limiting to 6 x Icnom
Fast & soft inverse CAL diodes
Large clearance (10 mm) and
creepage distances (20 mm)
Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
UL recognized, file no. E63532
Typical Applications*
AC inverter drives
UPS
Electronic welders at fsw up to 20 kHz
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
1200
V
IC
Tj = 175 °C
Tc =25°C
890
A
Tc =80°C
671
A
ICnom
600
A
ICRM
ICRM = 3xICnom
1800
A
VGES
-20 ... 20
V
tpsc
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 125 °C
10
s
Tj
-40 ... 175
°C
Inverse diode
IF
Tj = 175 °C
Tc =25°C
707
A
Tc =80°C
529
A
IFnom
600
A
IFRM
IFRM = 3xIFnom
1800
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
3240
A
Tj
-40 ... 175
°C
Module
It(RMS)
500
A
Tstg
-40 ... 125
°C
Visol
AC sinus 50Hz, t = 1 min
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC =150 A
VGE =15V
chiplevel
Tj =25°C
1.75
2.2
V
Tj = 150 °C
2.2
2.65
V
VCE0
Tj =25°C
0.94
1.25
V
Tj = 150 °C
0.88
1.22
V
rCE
VGE =15V
Tj =25°C
1.4
1.6
m
Tj = 150 °C
2.2
2.4
m
VGE(th)
VGE=VCE, IC =24mA
6
6.5
7
V
ICES
VGE =0V
VCE = 1200 V
Tj =25°C
0.1
0.3
mA
Tj = 150 °C
mA
Cies
VCE =25 V
VGE =0V
f=1MHz
36
nF
Coes
f=1MHz
3.55
nF
Cres
f=1MHz
3.536
nF
QG
6900
nC
RGint
1.3
td(on)
VCC = 600 V
IC =600 A
VGE =±15 V
RG on =0.5
RG off =0.5
Tj = 150 °C
ns
tr
Tj = 150 °C
ns
Eon
Tj = 150 °C
65
mJ
td(off)
Tj = 150 °C
ns
tf
Tj = 150 °C
ns
Eoff
Tj = 150 °C
52
mJ
Rth(j-c)
per IGBT
0.049
K/W
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