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參數資料
| 型號： | SKP10N60A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速IGBT在不擴散核武器條約與軟，恢復快反平行快恢復二極管技術 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 443K |
| 代理商： | SKP10N60A |
SKP10N60A, SKB10N60A
SKW10N60A
1
Sep-02
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
http://www.infineon.com/igbt/Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SKP10N60A
600V
10A
2.3V
150
°
C
TO-220AB
Q67040-S4458
SKB10N60A
TO-263AB
Q67040-S4459
SKW10N60A
TO-247AC
Q67040-S4506
Maximum Ratings
Parameter
Value
Symbol
SKP10N60A
SKB10N60A
SKW10N60A
600
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
V
CE
I
C
V
A
20
10.6
I
Cpuls
-
40
40
I
F
21
10
I
Fpuls
V
GE
t
SC
42
±
20
V
10
μ
s
P
tot
92
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
G
C
E
P-TO-247-3-1
(TO-247AC)
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